ST gb20nb32lz gb20nb32lz-1 free download

File name stgb20nb32lz_stgb20nb32lz-1.pdf

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESHTM IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V 20 A STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE 3 1 3 s LOW ON-VOLTAGE DROP 12 s HIGH CURRENT CAPABILITY D 2PAK s HIGH VOLTAGE CLAMPING FEATURE I2PAK t( s) uc DESCRIPTION Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding ro INTERNAL SCHEMATIC DIAGRAM P performances. The built in collector-gate zener exhibits a very precise active clamping while the le te so gate-emitter zener supplies an ESD protection. - Ob (s) APPLICATIONS ct s ELECTRONIC IGNITION FOR AUTOMOTIVE o du e Pr o let O bs ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGB20NB32LZT4 GB20NB32LZ D2PAK TAPE & REEL STGB20NB32LZ-1 GB20NB32LZ I2PAK TUBE December 2003 1/11 STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage CLAMPED